Appeal No. 2006-0255
Application No. 09/839,596
The disclosed invention pertains to a lateral diffused
metal oxide semiconductor (LDMOS) integrated device.
Representative claim 5 is reproduced as follows:
5. A lateral diffused metal oxide semiconductor (LDMOS)
integrated device comprising:
a semiconductor substrate;
a drain region of a first conductivity type adjacent said
semiconductor substrate and comprising a superficial buffer
region being more heavily doped than adjacent portions of said
drain region;
a body region completely surrounded on a bottom and sides
thereof by said buffer region and having a second conductivity
type; and
a source region in said body region and having the first
conductivity type.
The examiner relies on the following references:
Contiero et al. (Contiero) 5,041,895 Aug. 20, 1991
Huang 5,665,988 Sep. 09, 1997
Claim 5 stands rejected under 35 U.S.C. § 102(b) as being
anticipated by the disclosure of Huang. Claims 6-11 and 14-18
stand rejected under 35 U.S.C. § 103(a) as being unpatentable
over the teachings of Huang taken alone. Claims 12 and 13 stand
rejected under 35 U.S.C. § 103(a) as being unpatentable over the
teachings of Huang in view of Contiero.
2
Page: Previous 1 2 3 4 5 6 7 8 Next
Last modified: November 3, 2007