Appeal No. 2006-0255
Application No. 09/839,596
specific arrangement of conductive regions within a semiconductor
substrate. In view of the discussion above, we look to see if
the device recited in claim 5 exists in the Huang device. The
regions of conductivity as recited in claim 5 exist in Huang as
pointed out by the examiner. In our view, the question is
whether the regions identified by the examiner can properly be
called a “drain region,” a “body region” and a “source region” as
recited in claim 5. The examiner identifies source region 11 of
Huang as the claimed source region, and region 11 is described as
a source region in Huang [column 7, lines 6-7]. The claimed body
region connotes no particular function, and region 9 of Huang can
be a body region as identified by the examiner. The examiner
identifies region 2 of Huang as the drain region. This region 2
is separated from the source region 11 by the body region 9 and
the buffer region 13 as identified by the examiner. Huang
discloses that the buffer region 13 prevents punch-through
between region 9 and region 2 [column 7, lines 14-16]. The fact
that buffer region 13 of Huang prevents punch-through suggests
that region 2 acts as a drain with respect to source 11 in
Huang’s device. Therefore, region 2 of Huang is a drain region
as asserted by the examiner. Thus, the regions as recited in
claim 5 exist in Huang in the manner recited in claim 5.
5
Page: Previous 1 2 3 4 5 6 7 8 Next
Last modified: November 3, 2007