Appeal No. 2006-0547
Application No. 10/276,568
BACKGROUND
Appellant's invention relates to a semiconductor power component with
meandering polysilicon resistor. A copy of the representative claim under appeal is set
forth below.
12. A semiconductor power component, comprising a reduced surface field
region located between a high-pressure side and a low-pressure side; at least
one polysilicon resistor located between said high pressure side and said low
pressure side, said polysilicon resistor being disposed above said reduced
surface field region being electrically insulated from said reduced surface field
region, said polysilicon resistor being formed so that it is operative for signal
transmission between said high-pressure side and said low-pressure side and
being laid in a meandering pattern from said high pressure side to said low
pressure side, said polysilicon resistor having a linear voltage drop along its
length and being formed so as to provide signal transmission between said
high-pressure side and said low-pressure side.
The prior art references of record relied upon by the examiner in rejecting the
appealed claims are:
Endo 5,315,139 May 24, 1994
Robb et al. 5,714,396 Feb. 3, 1998
Christiansen 6,054,891 Apr. 25, 2000
Claims 12, 13, 15, and 19-22 stand rejected under 35 U.S.C. § 102 as being
anticipated by Robb. Claim 14 stands rejected under 35 U.S.C. § 103 as being
unpatentable over Robb in view of Endo. Claims 16-18 stand rejected under 35 U.S.C.
§ 103 as being unpatentable over Robb in view of Christiansen.
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