Appeal No. 2006-0783
Application No. 10/396,164
BACKGROUND
Appellants= invention relates to processes for fabricating semiconductor device
structures. The claimed process includes forming a layer or structure comprising doped
silicon dioxide adjacent to another layer or structure comprising undoped silicon dioxide.
The process also includes exposing an etchant comprising C2HxFy to selected regions of
the layer or structure comprising undoped silicon dioxide. (Brief, p. 4). Representative
claim 9, as presented in the Brief, is reproduced below:
9. A process for fabricating a semiconductor device structure, comprising:
forming a layer or structure comprising doped silicon dioxide over another
layer or structure comprising undoped silicon dioxide; and
exposing selected regions of the layer or structure to an etchant comprising
C2HxFy, where x is an integer from 3 to 5, inclusive, y is an integer from 1 to
3, inclusive, and x + y = 6, with the etchant etching the layer or structure at a
faster rate than the another layer or structure is etched.
CITED PRIOR ART
As evidence of unpatentability, the Examiner relies on the following reference:
Pu et al. (Pu) 5,843,847 Dec. 01, 1998
(filed April 29, 1996)
Claims 9 and 11-14 stand rejected under 35 U.S.C. § 102(e) as anticipated by, or in
the alternative under 35 U.S.C. § 103(a) as obvious over Pu.1 (Answer, pp. 3-4).
1 As indicated on page 2 of the Answer, the subject appeal is related to Appeal No. 2001-2244 of Appellants'
application SN 09/625,144 and to Appeal No. 2002-0702 of Appellants' application SN 09/711,324. The pivotal
issues of these respective appeals are distinct. Therefore, the disposition of the related appeal is not determinative of
the disposition of the subject appeal.
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