Appeal No. 2006-1193 2
Application No. 09/961,036
Representative claim 17 is reproduced as follows:
17. A process comprising:
• forming a metallization;
• forming a refractory metal first layer over the metallization;
• forming a refractory metal second layer over the refractory metal first
layer;
• forming a refractory metal third layer above and on the refractory
metal second layer, wherein the refractory metal third layer is
substantially the same metal as the refractory metal first layer;
• forming a refractory metal fourth layer above and on the refractory
metal third layer, wherein the refractory metal fourth layer is
substantially the same metal as the refractory metal second layer; and
• forming an electrically connective bump above the refractory metal
fourth layer.
The examiner relies on the following references:
Agarwala U.S. Pat. 5,376,584 Dec, 27, 1994
Yi et al. (“Yi”) U.S. Pat. 6,348,730 Feb. 19, 2002, filed Aug. 3, 2000
Tummala, et al., eds., “Microelectronics Packaging Handbook,
Semiconductor Packaging, Part II,” 2nd edition, Kluwer Academic Publishers,
Boston, 1997, pp. 132-139 (“Tummala Handbook”).
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