Appeal Number: 2006-1372
Application Number: 09/197,767
1. A semiconductor device comprising:
at least one transistor;
at least one interlayer insulating film formed over said transistor, said interlayer
insulating film having at least one contact hole;
an embedded conductive layer provided to fill said contact hole wherein a top
surface of said embedded conductive layer is flush with a top surface of said interlayer
insulating film; and
a reflective pixel electrode having a flat upper surface thereon, formed on said
interlayer insulating film wherein said reflective pixel electrode is electrically connected
to said transistor through said embedded conductive layer,
wherein the embedded conductive layer comprises a conductive material
dispersed in a medium, the conductive material being selected from the group consisting
of carbon, zinc oxide, aluminum, and nickel.
The prior art references of record relied upon by the examiner in rejecting the
appealed claims are:
Liu 5,536,950 Jul. 16, 1996
Miyawaki 5,644,370 Jul. 01, 1997
Fukunaga 5,706,064 Jan. 06, 1998
Yamazaki 5,990,542 Nov. 23, 1999 (Dec. 16, 1996)
Sato 6,081,305 Jun. 27, 2000 (May 21, 1996)
Okita 6,097,453 Aug. 01, 2000 (Jun. 02, 1997)
Izumi 6,400,428 Jun. 04, 2002 (Mar. 20, 1996)
Claims 1, 5, 16, 22 through 27, 40, 46, 47, 51, 55, 59, 63, 67, 68, 71, and 72 stand
rejected under 35 U.S.C. § 103 as being unpatentable over Liu in view of Fukunaga and
Izumi.
Claims 2, 22 through 27, 40, 48, 52, 56, 60, and 64 stand rejected under 35 U.S.C.
§ 103 as being unpatentable over Liu in view of Yamazaki, Fukunaga, and Izumi.
Claims 3, 22 through 27, 40, 49, 53, 57, 61, 65, 69, 70, 73, and 74 stand rejected
under 35 U.S.C. § 103 as being unpatentable over Sato in view of Okita, Fukunaga, and
Miyawaki.
Claims 4 and 50 stand rejected under 35 U.S.C. § 103 as being unpatentable over
Sato in view of Okita, Miyawaki, and Yamazaki.
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