Ex Parte Yue et al - Page 1



               The opinion in support of the decision being entered today was not     
               written for publication and is not binding precedent of the Board.     


                      UNITED STATES PATENT AND TRADEMARK OFFICE                       
                                    ____________                                      
                         BEFORE THE BOARD OF PATENT APPEALS                           
                                  AND INTERFERENCES                                   
                                    ____________                                      
                  Ex parte CHEISAN J. YUE, MOHAMMED A. FATHIMULLA,                    
                     ERIC E. VOGT, and WILLAIM L. LARSON                              
                                    ____________                                      
                                Appeal No. 2006-1458                                  
                             Application No. 10/040,395                               
                                    ____________                                      
                                      ON BRIEF                                        
                                    ____________                                      
          Before RUGGIERO, BLANKENSHIP, and SAADAT, Administrative Patent             
          Judges.                                                                     
          RUGGIERO, Administrative Patent Judge.                                      
                                 DECISION ON APPEAL                                   
               This is a decision on the appeal from the final rejection of           
          claims 32-40.                                                               
               The claimed invention relates to a method of making a                  
          varactor in which a plurality of alternating p- wells and N+                
          regions are formed in a silicon layer of an SOI structure.  Each            
          of a plurality of gate oxides is formed above a corresponding one           
          of the P- wells, and each of a plurality of silicon gates is                
          formed above a corresponding one of the gate oxides.  The silicon           

                                          1                                           



Page:  1  2  3  4  5  6  7  8  9  Next 

Last modified: November 3, 2007