Appeal No. 2006-3039
Application No. 10/751,141
cavities exist in the isolation structures; therefore, no material can be deposited in such
non-existent cavities [reply brief, page 5].
In response, the examiner refers to Figures 7-18 of Michejda that illustrate the
process of forming the semiconductor device. Specifically, the examiner contends that
doped polysilicon materials 1010 are formed in the isolation oxide regions 810, 510 that
are disposed within trenches 410, 415 [answer, page 9]. The examiner then contends
that the doped polysilicon material is disposed within a shallow cavity formed in the
isolation oxide region [id.].
We will not sustain the examiner’s anticipation rejection of claim 12. We simply
fail to see how a cavity is formed in the isolation oxide region of Michejda, let alone
depositing polysilicon material in such a cavity as claimed. Turning to representative
Figs. 1A and 12 of Michejda, we agree with the examiner that polysilicon material that
forms the source and drain regions is deposited on isolation oxide structures 150, 810.
As shown in the figures, isolation structures 150, 810 have a contoured, mound-like
profile.
But we fail to see a cavity in these mound-shaped structures or any other
structure in Michejda that the skilled artisan would reasonably construe as a cavity in
the isolation oxide region as claimed. A cavity is “a hollow space within a solid object.”1
Although the contoured isolation regions 150, 810 may taper towards their ends, such a
1 Compact Oxford English Dictionary, at http://www.askoxford.com/concise_oed/cavity?view=uk (last visited Nov.
17, 2006).
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