Appeal 2006-2133
Application 10/679,144
This appeal involves claims 74-76 and 80-97, the only claims pending
in this application. We have jurisdiction over the appeal pursuant to 35
U.S.C. § 6(b) (2002).
INTRODUCTION
The claims are directed to the fabrication of a haze free lead zirconate
titanate, Pb(ZrTi)O3, film, known as a PZT film, on a semiconductor wafer.
The PZT film fabrication includes a preheat step in which a vacuum, an inert
gas, or a mixture of an inert gas and an oxidizer gas is used to preheat the
semiconductor wafer prior to the PZT film deposition.
Claim 74 is illustrative:
74. A haze free PZT film prepared in accordance with the method
comprising:
forming a front-end structure over a semiconductor substrate;
forming a bottom electrode over said front-end structure;
preheating said semiconductor wafer, and
forming a PZT film over said bottom electrode;
wherein said preheating step comprises placing said semiconductor
wafer on a heater, and heating said semiconductor wafer in an ambient
comprised of a mixture of an inert gas and an oxidizer gas.
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