Appeal 2007-0706
Application 09/905,172
Huang describes a method for forming a semiconductor device
comprising: providing a substrate structure; forming an organic
layer with low dielectric constant over the substrate; depositing
a dielectric layer, SiON, over the organic layer; providing a
patterned photoresist (claimed organic photoresist: please see
cited art below) over the dielectric layer; etching the dielectric
layer with dry etch (claimed first plasma etching) until
apertures are formed in the dielectric layer; etching the organic
layer using an anisotropic etching (claimed second plasma
etching) until apertures are formed in the organic layer (col. 2,
line 47-co1. 3, line 17). (Compare Answer 3 with Brief and
Reply Brief in their entirety.)
2. According to the Appellants at page 6 of the Brief:
Huang describes a semiconductor device and method of
formation thereof. The device has a semiconductor substrate,
an insulating layer, which may be organic, thereon, a dielectric
layer thereon and a patterned photoresist thereon. The
insulating layer is not described as comprising carbon and
hydrogen and is not deposited by CVD. In fact there is no
disclosure of any specific organic material.
3. Huang’s organic layer with low dielectric constant is known to
provide an insulation function (referred to by the Appellants as an insulation
layer), but is not said to contain carbon and hydrogen and is not said to be
deposited by CVD. (Compare Answer 3 with Brief 6.)
4. Hasegawa describes employing an organic layer with low dielectric
constant comprising carbon and hydrogen as an insulation layer in producing
a semiconductor device. (Compare Answer 3, with Brief 6.)
5. Hasegawa teaches (col. 9, ll. 4-12) that:
The dielectric layer can be formed, for example, by forming a
precursor of the polymer by a spin coater and then baking at
4
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Last modified: September 9, 2013