Appeal 2007-1295
Application 10/109,713
31. A dual damascene structure comprising:
a substrate;
a metal layer provided within said substrate;
a methylsilsequiazane layer located over said substrate;
a via situated within said methylsilsequiazane layer and extending
to at least a portion of said metal layer, said via being lined with a
tungsten nitride layer and filled with a copper material; and
a trench situated within said methylsilsequiazane layer and
extending to said via, said trench being lined with said tungsten
nitride layer and filled with said copper material.
The Examiner relies on the following references in rejecting the
appealed subject matter:
Chen US 6,352,938 B2 Mar. 5, 2002
Lopatin US 6,368,954 B1 Apr. 9, 2002
Farrar US 6,395,632 B1 May 28, 2002
T. Kikkawa, Current and Future Low-K Dielectrics for Cu Interconnects,”
IEDM Tech. Digest, 253-256 (2000).
J.W. Klaus, S.J. Ferro, and S. M. George, Atomic Layer Deposition of
Tungsten Nitride Films Using Sequential Surface Reactions, Journal of the
Electrochemical Society, 2000, 147, no. 3, 1175-1181 (2000).
Claims 31-43 stand rejected under 35 U.S.C. $ 103 as unpatentable
over Chen in view of Lopatin and the "Admitted Prior Art" or Kikkawa;
claims 34 and 40 stand rejected under 35 U.S.C. § 103 as unpatentable over
of Lopatin et al. and the "Admitted Prior Art" or Kikkawa, further in view of
Klaus; and claims 44 and 45 stand rejected under 35 U.S.C. § 103 as
unpatentable over of Lopatin and the "Admitted Prior Art" or Kikkawa,
further in view of Farrar or the "Admitted Prior Art."
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