Appeal 2007-1940
Application 10/362,942
¶ 0015). Suzuki further discloses the glass component can contain lead
oxide PbO and bismuth oxide Bi2O3 (id. ¶ 0020). The oxide containing Ti of
the dielectric material component can be such systems as BaO·nTiO2 and
BaO·4TiO2·Ln2O3 (id. ¶ 0026). Suzuki discloses the taught dielectric
composition can be baked at a temperature of less than 1,000°C (id. ¶ 0011).
Suzuki also discloses a multilayer wiring substrate formed from glass
and ceramic substrate layers and from dielectric layers, the latter layers
prepared from the described dielectric composition (id., e.g., ¶¶ 0028-0034
and Fig. 1). The substrate layer is formed from an aluminum oxide skeleton
component and from a glass component, wherein the glass component can
be an alkali rare earth silicon system glass in which “SrO is essential, and it
is preferable that it contains one or more types of CaO and MgO” (id.
¶ 0030).
Suzuki discloses in Table 1, dielectric compositions 1-10 wherein the
glass components of Examples 1 through 10 satisfy the requirements for the
ingredients of the glass material component of claim 21; the glass
component of Examples 2, 9, and 10 contain niobium oxide Nb2O5 and thus,
additionally satisfy the requirements for the ingredients of the glass material
of claim 23. The glass ingredients of the Examples include at least SiO2,
B2O3, Al2O3, and La2O3, and 1 or more of ZrO2, TiO2, Nb2O5, Pr6O11, Nd2O3.
The amount of SiO2 ranges from 24-40 mol%. The ceramic component of
the Examples satisfies the requirements for the specified ingredients of the
oxide ceramic component of claims 21 and 23. Examples 11 and 12 are
comparative examples, and the glass component of the latter
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