Appeal 2007-2417
Application 10/688,521
A method comprising:
developing a patterned photoresist:
absorbing a plasticizer in a supercritical fluid into the surface of
said patterned photoresist after developing the photoresist; and
reflowing the photoresist after absorbing the plasticizer.
9. The Hallock patents each teach a process for reducing line edge
roughness from the surface of a patterned photoresist. (Hallock at
1:15-20 and 2:33-36).
10. The process entails “exposing the patterned photoresist to a vapor
and then heating the substrate having the photoresist thereon [to
allow for reflow] to a temperature and for a time sufficient to
decrease edge roughness at the surfaces.” (Hallock at 6:18-25 and
40-54).
11. The vapor may be formed from a solvent such as ethyl lactate.
(Hallock at 7:1-10).
12. Verhaverbeke teaches “methods …using supercritical fluids...in
semiconductor applications.” (Verhaverbeke at 0002).
13. Verhaverbeke discusses an embodiment where “photoresist
patterns after development, such as the photoresist layer… may be
dried to advantage with a supercritical fluid…” (Verhaverbeke at
0047).
14. Verhaverbeke discusses another embodiment where a supercritical
fluid is used to cure a photoresist layer. (Verhaverbeke at 0060).
15. According to Verhaverbeke, use of the drying supercritical fluid is
useful to avoid collapse of the developed photoresist pattern and
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Last modified: September 9, 2013