Appeal No. 96-3649
Application 08/344,509
double metal oxide) comprising the steps of selecting and
vaporizing a volatile precursor (e.g., a double metal alkoxide)
which contains metal constituents in a stoichiometric ratio
desired for the ultimate deposited oxide film. Appellants’
method employs the step of hydrolyzing the volatile precursor in
the vapor state to form a hydrolyzed precursor followed by
reacting the hydrolyzed precursor on a substrate to form a film
containing the metal constituents in the desired stoichiometric
ratio, i.e., the stoichiometric ratio provided by the originally
selected volatile precursor.
In their ?Background of the Invention? section of the
specification at page 3, appellants indicate that metal oxide
chemical vapor deposition (MOCVD) of multicomponent oxide films
has successfully involved the use of separate metalorganic
compounds containing the respective film components as
precursors. As stated in this portion of the specification, the
precursor compounds are ordinarily independently transformed to
the vapor phase by evaporation or other means in a controlled
manner to achieve the desired molar ratio between vapor phase
species. This approach is said to inevitably require a trial-
and-error approach to achieve a precisely stoichiometric film
composition. At the top of page 7 of the specification,
3
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Last modified: November 3, 2007