Appeal No. 95-4641
Application No. 08/023,122
said to avoid occurrence of hot-electron deterioration due to
moderation of the horizontal electrical field of the low density
(source-drain) diffusion layer provided by a first gate side wall
having a high dielectric constant. Further, with the provision of a
second gate side wall insulating film which covers all of the
surfaces of the first gate side wall that are not in contact with an
insulating film, it is said that the capacitance between the gate
electrode and the wiring above the gate can be reduced.
Independent claim 1 is reproduced as follows:
1. A MIS transistor, comprising:
a semiconductor substrate of a first conduction
type;
a gate insulation film and a gate electrode which
are selectively formed on said semiconductor substrate;
a second insulating film having a first portion formed
on a side surface of said gate electrode and a second
portion formed on said semiconductor substrate;
a first gate side wall film provided on a surface of
said first portion of said second insulating film and a
surface of said second portion of said second insulating
film and having a dielectric constant greater than that of
said second insulating film, said first gate side wall
film having a height smaller than that of said gate
electrode;
a low density diffusion layer of a second
conduction type formed on said semiconductor substrate
so as to be disposed below and around said gate electrode
so that each end part of said gate electrode overlaps said
low density diffusion layer; and
2
Page: Previous 1 2 3 4 5 6 7 8 9 Next
Last modified: November 3, 2007