Appeal No. 95-4641
Application No. 08/023,122
With regard to the rest of the rejections under 35 U.S.C.
§ 112, second paragraph, they all seem to be directed to the "below
and around" language appearing in the claims. Appellants have
explained that reference to the drawings clearly shows that the
recited diffusion layers are formed "below and around" the cited
structures, as claimed. For example, low density diffusion layer 8
is shown as being formed "below and around" the gate electrode 3; the
high density diffusion layer 9 is shown formed "below and around" the
first gate side wall insulating film 5 and "below and around" the
gate electrode 3.
Accordingly, since the examiner's rejections under
35 U.S.C. § 112, second paragraph, appear unreasonable in view of
appellants' amendments and in view of what is clearly shown in the
drawings, we will not sustain the rejection of claims 1, 3 and 5
through 14 under 35 U.S.C. § 112, second paragraph.
We turn now to the rejection of claims 1, 3 and 5 through
14 under 35 U.S.C. § 103.
The examiner cites, in particular, Figure 2(d) of Tsukura
as disclosing the transistor as claimed but for the disclosure of a
lightly doped diffusion region formed below a sidewall of the gate
electrode. The examiner then cites Chen for the teaching of a
lightly doped n-type region formed below a gate electrode wherein the
5
Page: Previous 1 2 3 4 5 6 7 8 9 Next
Last modified: November 3, 2007