Appeal No. 95-0634 Page 2
Application 07/962,322
pending. (Paper 9 at 1.) We affirm, but we also make a
statement pursuant to 37 CFR § 1.196(c) ("Rule 196(c)").
2. The application on appeal was filed on 15 October 1992.
Appellant claims the benefit pursuant to 35 U.S.C. § 119 of
Japanese patent application no. Hei 3-284551, filed 30 October
1991. (Paper 1, declaration at 1; Paper 6.) Rohm K.K. is the
real party in interest. (Paper 6.)
3. The application is entitled "Semiconductor memory
device with three-dimensional cluster distribution". (Paper 1
at 1.) The subject matter of the invention "relates to a
nonvolatile memory device, for example, a flash EEPROM (flash
electrically erasable programmable read-only memory), in which an
insulating film containing metal or semiconductor particles is
used in a gate of a transistor." (Paper 1 at 1.)
4. The sole claim on appeal defines the subject matter of
the invention as follows (Paper 8 at 2, emphasis added):
2. A semiconductor memory device comprising:
a silicon substrate;
an insulating layer with a predetermined
width, in which clusters of semiconductor material are
distributed in three dimensions so as to be overlapped
in a direction through the layer;
a gate region formed on an upper portion of
said insulating layer; and
a source region and a drain region formed in
spaced relation in the substrate beneath said
insulating layer;
wherein said drain region is formed by an
oblique ion implantation, and is overlapped with said
insulating film layer.
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