Appeal No. 95-0634 Page 3
Application 07/962,322
5. Figure 1 illustrates the claimed subject matter. The
semiconductor memory device has a substrate 1 with a source
region 5 and a drain region 6, including a portion of the
drain 6a formed beneath an insulating film 2. The insulating
film 2 has semiconducting clusters 3. A gate 4 is formed on the
insulating film 2. (Paper 1 at 4-5.)
B. The rejection
6. The examiner rejected claim 2 under 35 U.S.C. § 102 as
anticipated by the following reference:
Yamazaki et al. (Yamazaki) 3,878,549 15 April 1975
7. Yamazaki teaches a transistor-based semiconductor
memory device with semiconductor clusters or thin-films. (1:22-
29.) The examiner relies on Yamazaki's Figures 1 and 2G for the
anticipatory teachings. (Paper 9
at 2-3.) Figure 1 (right) shows a
transistor structure with a
substrate 5, a source region 14, a
drain region 16, a gate 1, and
insulating films 2 & 4 with
semiconductor clusters 3.
Yamazaki does not say how the
substrate 5, source 14, drain 16,
or gate 1 are formed. (3:11-19.)
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