Appeal No. 95-3462
Application No. 08/083,206
The claims on appeal are directed to a chemical vapor
deposition (CVD) process involving the formation of a metal
nitride.
Appellants indicate on page 3 of their appeal brief that
the patentability of the appealed claims is not argued
separately. Accordingly, all of the claims stand or fall with
representative claim 1 which reads as follows:
1. A chemical vapor deposition process for preparing a
metal nitride, comprising contacting a metal halide with an
amine at a temperature sufficient to form a metal nitride.
The examiner relies upon the following four prior art
references of record to support multiple rejections of the
claims:
Bohg et al. (Bohg) 4,091,169 May 23,
1978
Gordon 4,535,000 Aug. 13,
1985
Goodman et al. (Goodman) 4,946,712 Aug.
7, 1990
Matsumura 62-70208 (Japan) Mar. 31,
1987
The following rejections constitute the basis for this
appeal:
I. Claims 1-3, 5 and 7-9 stand rejected under 35 U.S.C.
§ 102(b) as being anticipated by Matsumura.
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