Appeal No. 95-3462
Application No. 08/083,206
II. Claims 4, 6 and 10-18 stand rejected for obviousness
under 35 U.S.C. § 103 in view of Matsumura.
III. Claims 1-18 stand rejected for obviousness under
35 U.S.C. § 103 in view of either Goodman or Gordon, with each
taken in combination with Bohg.
We affirm the rejections which are based upon Goodman,
Gordon and Bohg essentially for the reasons presented in the
examiner’s answer. On the other hand, we reverse those
rejections which are based upon the Matsumura reference.
As for Matsumura, we agree with appellants that the
reference does not teach reacting a metal halide with an amine
to form a metal nitride via CVD. As we construe appellants’
claims, the step of contacting a metal halide with an amine to
form a metal nitride is to be performed by a CVD method. In
contrast, Matsumura suggests reacting a metal halide with an
amine in the liquid phase at a relatively low temperature.
While Matsumura does mention that CVD techniques have been
used in the prior art to form metal nitrides, there is no
indication that these prior art CVD techniques involved
contacting a metal halide with an amine.
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