Appeal No. 95-4174
Application 08/165,553
KRASS, Administrative Patent Judge.
DECISION ON APPEAL
This is a decision on appeal from the final rejection of
claims 14 through 21. Claims 1 through 13 have been canceled.
The invention pertains to a BiCMOS structure having a
thick dielectric layer to reduce emitter-base capacitance in
bipolar transistors.
Independent claim 14 is reproduced as follows:
14. A single polysilicon layer BiCMOS structure at a
semiconductor surface of a body, comprising:
a bipolar transistor, comprising:
a collector region of a first conductivity type and
having a first impurity concentration;
an intrinsic base region of a second conductivity
type disposed at said semiconductor surface and within said
collector region;
an emitter region of said first conductivity type
disposed at said semiconductor surface and within said
intrinsic base region;
a thick dielectric layer, directly adjacent said
intrinsic base region and having a contact therethrough to
said emitter region; and
an emitter electrode, disposed over said thick
dielectric layer such that said thick dielectric layer
separates said emitter electrode from said intrinsic base
2
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