Appeal No. 95-4174
Application 08/165,553
region, wherein said emitter electrode is in contact with said
emitter region through said contact;
an insulated-gate field effect transistor, comprising:
a well region of said first conductivity type and
having said first impurity concentration;
a gate dielectric comprising thermal silicon dioxide
of a thickness substantially thinner than a thickness of said
thick dielectric layer of said bipolar transistor, disposed
over a portion of said well region;
a gate electrode disposed over said well region and
insulated therefrom by said gate electric [sic, dielectric];
and
source drain regions of said second conductivity
type and having a second impurity concentration disposed at
said semiconductor surface on both lateral sides of said gate
electrode and within said well region; and
an isolation structure disposed at said
semiconductor surface between said bipolar transistor and said
insulated-gate field effect transistor.
The examiner relies on the following references:
Homma et al. (Homma) 4,735,916 Apr. 5, 1988
Schaber et al. (Schaber) 4,737,472 Apr. 12,
1988
Maeda et al. (Maeda) 4,931,407 Jun. 5, 1990
Soejima 4,957,874 Sep. 18, 1990
Uchida et al. (Uchida) 5,214,302 May 25, 1993
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