Appeal No. 95-4929
Application 08/093,790
The invention relates to a memory structure using a ferro-
electric material. More particularly, the invention relates to a
nonvolatile memory capable of electric re-writing.
The independent claim 4 is reproduced as follows:
4. A semiconductor device comprising:
a transistor having a gate electrode over a
substrate, and source and drain electrodes in said
substrate;
a ferroelectric capacitor located above said
substrate and including a lower electrode, a
dielectric including a ferroelectric material
which is located over said lower electrode, and an
upper electrode having first and second portions,
said dielectric being located between said first
portion and the substrate, said second portion
extending to and being in direct contact with said
source electrode.
The Examiner relies on the following references:
Sigg et al. (Sigg) 4,141,022 Feb. 20, 1979
Green et al. (Green) 4,851,895 Jul. 25, 1989
Takenaka (Takenaka 049) 5,043,049 Aug. 27, 1991
Miller et al. (Miller) 5,046,043 Sep. 03, 1991
Takenaka (Takenaka 305) 5,099,305 Mar. 24, 1992
Claims 4, 7 and 9 stand rejected under 35 U.S.C. § 103 as
being unpatentable over Takenaka 049 in view of Takenaka 305.
Claims 4 through 10 stand rejected under 35 U.S.C. § 103 as being
unpatentable over Takenaka 049 in view of Takenaka 305 and
further in view of Miller, Green or Sigg.
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