Ex parte LESK et al. - Page 2




          Appeal No. 96-0155                                                          
          Application No. 07/829,660                                                  


               This is a decision on an appeal from the final rejection               
          of claims 1 through 25 which are all of the claims in the                   
          application.                                                                
               The subject matter on appeal relates to a method useful                
          in the backside processing of semiconductor wafers which                    
          comprises bonding a processed first surface of the                          
          semiconductor wafer to a support means such as a handle wafer               
          prior to processing a second surface of the wafer.  This                    
          appealed subject matter is adequately illustrated by                        
          independent claims 8 and 18 which read as follows:                          
               8. A method useful in the backside processing of                       
          semiconductor wafers comprising the steps of:                               
               providing a semiconductor wafer having a first surface                 
          being substantially processed and a second surface;                         
               bonding said first surface of said semiconductor wafer to              
          a handle wafer;                                                             
               thinning said semiconductor wafer from said second                     
          surface;                                                                    
               dicing said semiconductor wafer while bonded to said                   
          handle wafer to form individual dice; and                                   
               removing said individual dice from said handle wafer.                  
               18. A method useful in the backside processing of                      
          semiconductor wafers comprising the steps of:                               


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