Appeal No. 96-1536
Application 08/136,241
examiner's refusal to allow claims 1 through 3, all the claims
remaining in appellants' application for reissue of U.S.
Patent 5,057,444, which issued on October 15, 1991.
The appealed subject is directed to a process for
the preparation of various semiconductor devices.
Claim 2, which is illustrative of the claimed
process, is reproduced below for a more facile understanding
of appellants' invention.
2. A method of fabricating a trench capacitor
comprising:
a step of forming a trench in a semiconductor
substrate having a principle [sic, principal]
surface, said trench having four sidewalls which
extend into said substrate in a direction
perpendicular to said principal surface of said
semiconductor substrate and which are perpendicular
to each other, and said trench having a bottom
parallel to said principal surface;
a step
of forming an outer electrode including,
(a) a step of positioning said semiconductor
substrate in a first position;
(b) a step of implanting ions into a first side-wall
of said side-walls of said trench from a direction
inclined to a normal to a plane containing said
principal surface of said semiconductor substrate;
(c) a step of positioning said semiconductor
substrate in a second position which is different
from said first position by rotating said semiconductor
substrate by 90E about an axis of rotation which is
2
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