Appeal No. 96-1536
Application 08/136,241
perpendicular to said principal surface of said
semiconductor substrate;
(d) a step of implanting ions of the same type and
to the same extent as implanted in the first side-wall
into a second side-wall of said side-walls of said
trench from said direction inclined to the normal to
the plane containing said principal surface of said
semiconductor substrate;
(e) a step of positioning said semiconductor
substrate in a third position which is different from
said first and second positions by rotating said
semiconductor substrate by 90E about said rotation axis;
(f) a step of implanting ions of the same type and to the
same extent as implanted in said first and second side-walls
into a third side-wall of said side-walls of said trench from
said direction inclined to the normal to the plane containing
said principal surface of said semiconductor substrate;
(g) a step of positioning said semiconductor
substrate in a fourth position which is different from said
first, second and third positions by rotating said
semiconductor substrate by 90E about said rotation axis;
(h) a step of implanting
ions of the same type and to the same extent implanted in said
first, second and third side-walls into a fourth side-wall of
said side-walls of said trench from said direction inclined to
the normal to the plane containing said principal surface of
said semiconductor substrate;
wherein all of the
steps of implanting are carried out such that the extent of
implantation and type of ion are such that an outer electrode
is thereby formed along said four side-walls of said trench;
a step of forming an insulating layer within the trench
along the outer electrode; and
a step of
forming an inner electrode within the trench along the
insulating layer.
OPINION
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