Appeal No. 96-2085
Application No. 08/301,536
consideration. Claims 9 and 22, as amended after final
rejection, are illustrative:
9. A method of fabricating a contamination resistant opening
for a fuse link on a semiconductor substrate comprising:
forming a first insulating layer over portions of the
substrate;
forming a fuse link on the first insulating layer;
forming a second insulating layer over the fuse link
and the first insulating layer;
forming a third insulating layer overlying the second
insulating layer;
forming a fourth insulating layer overlying the third
insulating layer;
forming a first opening over the fuse with vertical
sidewalls, the first opening extending through the second, third
and fourth insulating layers; said first opening exposing a
portion of said fuse;
forming a protective layer over the fourth insulating
layer, over at least the sidewalls of the first opening, and the
exposed portion of the fuse; said protective layer is formed of
silicon nitride having a thickness in the range of 3000 to 20,000
angstroms; and
forming a second opening in the protective layer over
the fuse thus exposing portions of said fuse.
22. A method of fabricating a contamination resistant opening
for a fuse link on a semiconductor substrate comprising:
forming a first insulating layer over portions of the
substrate;
forming a fuse link on the first insulating layer;
forming a second insulating layer over the fuse link
and the first insulating layer;
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Last modified: November 3, 2007