Appeal No. 97-1387
Application No. 08/251,011
The invention is directed to a semiconductor device as
set forth in independent claim 1, reproduced as follows:
1. A semiconductor device comprising:
a support structure formed of an electrically insulating
layer on a semiconductor material base of a first conductivity
type;
a plurality of field-effect transistors including first
and second field-effect transistors comprising:
first and second semiconductor material substrates for
said first and second field-effect transistors, respectively,
that are substantially crystalline and provided spaced apart
from one another on said electrically insulating layer with
each having a central portion thereof of said first
conductivity type, said first semiconductor material substrate
having a pair of terminating regions of said first
conductivity type separated by said central portion thereof
each having a greater conductivity than said central portion,
said second semiconductor material substrate having a pair of
terminating regions of a second conductivity type separated by
said central portion thereof;
first and second gate oxide layers provided on at least
said first and second semiconductor material substrate central
portions, respectively; and
first and second gate semiconductor structures of a
common conductivity type provided on said first and second
gate oxide layers across from said first and second
semiconductor material substrate central portions,
respectively.
The examiner relies on the following references:
' 112, second paragraph, was withdrawn by the examiner in the
answer.
2
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