Appeal No. 97-1387
Application No. 08/251,011
Hayashi 2-200603 Jan. 23, 1990
Malhi et al. (Malhi), “Novel SOI CMOS Design Using Ultra Thin
Near Intrinsic Substrate,” IEDM 82, pp. 107-10, 1982.
Whitlow et al. (Whitlow), “Mass-dispersive recoil spectrometry
studies of oxygen and nitrogen redistribution in ion-beam-
synthesized buried oxynitride layers in silicon,” App. Phys.
Lett., vol. 52, no. 22, pp. 1871-73, 1988.
Claims 1 through 4 stand rejected under 35 U.S.C. ' 103.
As evidence of obviousness, the examiner cites Hayashi in view
of Malhi with regard to claims 1, 2 and 4, adding Whitlow to
this combination with regard to claim 3.
Reference is made to the brief and answer for the
respective positions of appellants and the examiner.
OPINION
With regard to independent claim 1, the examiner takes
the position that Hayashi, in Figure 5, discloses all that is
claimed [see page 4 of the answer] but for a showing of
forming the insulating substrate 102 formed on a p-type
silicon supporting substrate. The examiner reasons that since
Malhi shows a complementary type thin film FET, as does
Hayashi, but shows the transistor formed on an insulating
substrate which is then formed on a p-type Si substrate
3 Our understanding of Hayashi is based on an English
translation thereof prepared by the United States Patent and
3
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 Next
Last modified: November 3, 2007