Appeal No. 97-4425
Application 08/619,418
Kohno et al. (Kohno) Patent No. 5,072,425 Dec. 10, 1991
Rejection on Appeal
Claims 11-16, 18 and 19 stand rejected under 35 U.S.C.
§ 102(b) as being anticipated by Kohno. Claim 17 has been
objected to as being dependent from a rejected claim.
The Invention
The invention is directed to sense amplifier drive circuits
in a semiconductor memory. The sense line and a conductor
element are connected to both a first node of a first sense
amplifier and the second node of a second sense amplifier. Both
the sense line and the conductor element are for transferring
control signals to the sense amplifiers. Representative
independent claims 11 and 19 are reproduced below.
11. A semiconductor memory device having a semiconductor
substrate having a major surface thereof, comprising:
a first pair of bit lines, formed over the major surface,
having first and second bit lines, said first pair of bit lines
being coupled to a first memory cell, said first memory cell
causing a first potential difference between said first and
second bit lines;
a second pair of bit lines, formed over the major surface,
having third and fourth bit lines, said second pair of bit lines
being coupled to a second memory cell, said second memory cell
causing a second potential difference between said third and
fourth bit lines;
a first sense amplifier having a first node, said first
sense amplifier being connected to the first pair of bit lines,
for amplifying the first potential difference between said first
2
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