Appeal No. 95-3455
Application 07/945,902
The claimed invention is directed to a method for forming
a non-volatile memory having a floating gate electrode.
Floating gate electrodes are useful in re-writable, non-
volatile memory devices such as the so-called EPROM's
(electrically programmable read only memory devices). The
floating gate electrode is so-named because an insulating
tunnel oxide is sandwiched between the gate electrode and the
underlying silicon substrate. Thus, charges flowing in the
underlying substrate through the tunnel oxide into the
floating gate electrode are prevented from flowing back by the
tunnel oxide insulation.
Claim 6 is reproduced below for a more facile
understanding of appellants' invention.
Claim 6. A method for forming a non-volatile memory
having a floating gate electrode comprising the
steps of:
(a) forming a tunnel oxide layer used
for writing information on a silicon substrate,
(b) forming a polysilicon layer on
the tunnel oxide layer,
(c) forming a tungsten
silicide layer over the polysilicon layer with a
chemical vapor deposition using WF gas reduced with
6
a SiH Cl gas at a temperature in the range of 500 to
2 2
600EC, and the fluorine content in the resulting
2
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