Ex parte HOSOMIZU et al. - Page 13




          Appeal No. 95-3876                                                           
          Application 08/222,009                                                       

          circuit (24 and 25), trigger means (33), [and] control means                 
          (23)" (August 2, 1993, Office action at 3).  The examiner                    
          contends, and appellants do not dispute, that it would have                  
          been obvious in view of the Hayashi reference to replace                     
          Iwata's FET 15 with an IGBT; instead, appellants contend their               
          claims do not read on Iwata thus modified.  Specifically, with               
          respect to independent claim 14 they argue (Brief at 5, lines                
          4-14):                                                                       

                         In contrast to the arrangement disclosed in the               
                    Iwata et al[.] patent, in the circuit of the present               
                    invention the voltage at the gate of the IGBT is                   
                    positively removed, so that flash firing quickly                   
                    stops and the amount of emitted flash light is more                
                    accurately controlled.  Referring to the circuit of                
                    Figure 1, for example, when the firing of the flash                
                    is to be terminated, a logic high signal is                        
                    generated at the STOP terminal of the control                      
                    circuit 4.  This signal renders the transistor Q6                  
                    conducting, which in turn brings the transistors Q5                
                    and Q4 into a non-conducting state.  As a result,                  
                    the supply of voltage from the capacitor C2 to the                 
                    gate of the IGBT is interrupted.  At the same time,                
                    the transistor Q3 is brought into a conducting                     
                    state, to lower the voltage at the gate of the IGBT,               
                    thereby removing any capacitance component.                        
                    Consequently, the IGBT is immediately turned off,                  
                    and the flash is promptly extinguished.                            
                         The Iwata et al[.] patent does not disclose, nor              
                    otherwise suggest, this concept of removing an                     
                    enabling voltage at the gate of the FET in response                
                    to a flash terminating command, as recited in claim                
                    14.  Substituting an insulated gate bipolar                        
                    transistor for the FET 15, as suggested in the final               
                                        - 13 -                                         





Page:  Previous  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  Next 

Last modified: November 3, 2007