Appeal No. 95-3876 Application 08/222,009 circuit (24 and 25), trigger means (33), [and] control means (23)" (August 2, 1993, Office action at 3). The examiner contends, and appellants do not dispute, that it would have been obvious in view of the Hayashi reference to replace Iwata's FET 15 with an IGBT; instead, appellants contend their claims do not read on Iwata thus modified. Specifically, with respect to independent claim 14 they argue (Brief at 5, lines 4-14): In contrast to the arrangement disclosed in the Iwata et al[.] patent, in the circuit of the present invention the voltage at the gate of the IGBT is positively removed, so that flash firing quickly stops and the amount of emitted flash light is more accurately controlled. Referring to the circuit of Figure 1, for example, when the firing of the flash is to be terminated, a logic high signal is generated at the STOP terminal of the control circuit 4. This signal renders the transistor Q6 conducting, which in turn brings the transistors Q5 and Q4 into a non-conducting state. As a result, the supply of voltage from the capacitor C2 to the gate of the IGBT is interrupted. At the same time, the transistor Q3 is brought into a conducting state, to lower the voltage at the gate of the IGBT, thereby removing any capacitance component. Consequently, the IGBT is immediately turned off, and the flash is promptly extinguished. The Iwata et al[.] patent does not disclose, nor otherwise suggest, this concept of removing an enabling voltage at the gate of the FET in response to a flash terminating command, as recited in claim 14. Substituting an insulated gate bipolar transistor for the FET 15, as suggested in the final - 13 -Page: Previous 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 NextLast modified: November 3, 2007