Appeal No. 95-3876
Application 08/222,009
and for removing the enabling voltage at the gate in
response to a flash terminating command.[4]
In addition to claim 14, appellants separately argue the
patentability of dependent claims 8, 9, 10, and 13.
The references relied on by the examiner are:
Iwata et al. (Iwata) 4,847,538 July 11, 1989
Yasuhide Hayashi, POWER MOSFET IN WHICH THE FOCAL POINT IN THE
DEVELOPMENT IS MAKING A TRANSITION TO RESISTING VOLTAGE OF
BELOW 100 V AND OVER 800 V, 395 Nikkei Electronics 165-88
(1986).5
All of the appealed claims stand rejected under
35 U.S.C. § 103 as unpatentable over Iwata in view of Hayashi.
Figure 3 of Iwata shows control circuitry for a flash lamp 14
which is controlled by an FET 15 which serves the same
function as appellants’ IGBT:
Although not discussed by the examiner or the4
appellants, it appears they are construing the limitation "in
response to a flash terminating command" as modifying the
"removing" function but not the "applying" function.
Cited in appellants' Information Disclosure Statement5
filed June 8, 1992 (paper No. 2).
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