Appeal No. 95-3876
Application 08/222,009
the IGBT gate voltage to zero, whereas turning on transistor
Q6 (and thus turning off transistors Q5 and Q4) in the absence
of transistor Q3 would result in a slower discharge of the
current stored in the inherent capacitance of the IGBT gate to
ground through resistor R9 and thus in a slower reduction of
the IGBT gate voltage to zero and a slower turning off of the
IGBT.
Figures 6(a) and (b) depict two modifications of the
flash fire control circuit 5 shown in the Figure 1 embodiment
(Spec. at 25:6 to 27:15):
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Last modified: November 3, 2007