Appeal No. 1996-0189
Application No. 08/054,200
1. A method for producing an A1-containing layer having
a planar surface, onto a substrate having hole structures
formed on a surface thereof, the hole structures having a high
aspect ratio, comprising the steps of:
using a sputtering process, depositing an A1-containing
layer to close said hole structures at said surface
without filling a lower region of said hole structures;
holding said substrate at an elevated temperature; and
implementing said sputtering process at a pressure
between 1.3 X 10 Pa and 13 Pa and at a low partial-2
residual gas pressure.
The examiner relies upon the following references as
evidence of obviousness:
Lamont, Jr. et al. (Lamont) 4,756,810 Jul. 12, 1988
Foell et al. (Foell) 4,874,484 Oct. 17, 1989
Armstrong et al. (Armstrong) 4,994,162 Feb. 19, 1991
Wang 5,108,570Apr. 28, 1992
Ajika et al. (Ajika) 5,162,262 Nov. 10, 1992
(filed Jul. 8, 1991)
Appellants' claimed invention is directed to a method for
producing a planar aluminum-containing layer onto a substrate
that has hole structures having a high aspect ratio, such that
the openings of the hole structures are closed without filling
the lower regions of the hole structures. The aluminum-
containing layer is deposited by a sputtering process wherein
the substrate is held at an elevated temperature and the
deposition proceeds at the recited low pressure.
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