Appeal No. 96-0462
Application 08/165,513
a thin film layer of electrode material having a
high surface resistivity formed on the substrate and
extending over a central portion of the array of
electrode segments so as to cover at least part of each
of the electrode segments, the thin film layer of
electrode material having sufficient surface conductivity
to distribute static electricity over the area of the
array to prevent localized accumulation of static
electricity on the electrode segments.
The Examiner relies on the following prior art:
Kamijo et al. (Kamijo) 4,718,751 January 12, 1988
Hanyu et al. (Hanyu) 4,932,757 June 12, 1990
Claims 3 and 5 stand rejected under 35 U.S.C. § 112,
first paragraph, based on a lack of enabling disclosure for
making a thin film of indium tin oxide (ITO) with a high
surface resistivity, such as 1 MS/G.
Claims 1, 2, 4, and 5 stand rejected under 35 U.S.C.
§ 103 as being unpatentable over Kamijo and Hanyu.
We refer to the Final Rejection (Paper No. 13) (pages
referred to as "FR__") and the Examiner's Answer (Paper
No. 18) (pages referred to as "EA__") for a statement of the
Examiner's position and to the Brief (Paper No. 16) (pages
referred to as "Br__") and the Reply Brief (Paper No. 19)
(pages referred to as "RBr__") for a statement of Appellants'
arguments thereagainst.
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