Appeal No. 96-1518
Application No. 08/190,244
The disclosed invention relates to a MOS transistor
formed on a semiconductor substrate. The MOS transistor has a
pair of channel stoppers that are electrically connected to a
source diffusion region formed on the surface of the
semiconductor substrate in order to drive the channel stoppers
in synchronism with the gate electrode of the MOS transistor.
Claim 10 is illustrative of the claimed invention, and it
reads as follows:
10. A MOS transistor formed on a semiconductor
substrate, comprising:
a source diffusion region formed on the surface of said
semiconductor substrate;
a drain diffusion region formed on the surface of said
semiconductor substrate at a position spaced apart from said
source diffusion region;
a channel formed in the surface of said semiconductor
substrate at a position between said source diffusion region
and said drain diffusion region;
a first insulating layer formed on said semiconductor
substrate;
a pair of channel stoppers formed in said first
insulating layer at an adequate interval therebetween to
determine the width of said channel, said pair of channel
stoppers being composed of polysilicon;
a second insulating layer formed on said pair of channel
stoppers;
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