Appeal No. 96-1583
Application 08/066,618
remaining in the present application, have been objected to by
the examiner. Claim 1 is illustrative of the appealed
claims:
1. In the fabrication of a BiCMOS integrated circuit
where a bipolar transistor is formed in a substrate
region of a first conductivity type, the improvement
comprising the steps of:
forming a base region in said substrate region
by implanting ions of a second conductivity type
into said first conductivity type substrate
region using at least two different energy
levels, the lower energy level for implanting
said second type conductivity ions into said
substrate region so as to form an active base
region, the higher energy level for implanting
said second conductivity type ions deeper into
said substrate region than the lower energy
level implant so as to form a more lightly doped
first conductivity type substrate region near
said base region; and
forming an emitter region in said base region
over said more lightly doped first conductivity
type substrate region.
The examiner relies upon the following reference as
evidence of obviousness:
Zdebel et al. (Zdebel) 4,740,478 Apr. 26,
1988
Appellants' claimed invention is directed to the
fabrication of a BiCMOS integrated circuit wherein a base
2
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