Appeal No. 96-2940
Application 08/259,073
Therefore, only the argued differences (1) and (2) are
relevant.
Hsue does exactly what Appellant does in terms of a
process using sidewalls to form closely spaced bit lines and
word lines. Hsue notes (col. 1, lines 18-21): "Researches in
the integrated circuit field generally have used the sidewall
technology to form smaller spaces than normally available
through lithography for various purposes." Appellant's
claims 1-25 are directed to a process wherein different
materials are used for the layer between sidewall spacers,
difference (1), and for the sidewall spacers, difference (2);
that is, claim 18 would be anticipated by Hsue if the terms
"polysilicon" and "glass" were not present. One of ordinary
skill in the semiconductor art doubtless would have
appreciated that different materials and process steps could
be used to form the layer between sidewalls and the sidewalls.
The issue here is whether the Examiner has established that a
person of ordinary skill in the art would have been led to
substitute the claimed materials from Jun.
The Examiner relies on Jun for differences (1) and (2).
Jun discloses depositing a layer of polysilicon 3 in a
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