Appeal No. 96-2940
Application 08/259,073
temperature range "about the transition temperature at which
the deposited polysilicon transitions from being deposited in
an amorphous form to being deposited in a polycrystalline
form" (col. 3, lines 24-27). "Formation of the polysilicon
layer a [sic] described above results in a layer consisting of
raised, rounded polysilicon features generally resembling
'hemispheres,' with characteristics of the hemispheres such as
size, shape and pitch dependent upon the particular deposition
conditions." Col. 3, lines 27-32. As shown in the figure 4
embodiment, the hemisphere particle layer 14 has alternating
hills and valleys. "On hemisphere particle layer 14,
planarizing insulation layer 15 of a material having an
etching selectivity higher than that of polysilicon is coated.
The material of planarizing insulation layer 15 may be SOG
[spin on glass], polyamide, CVD oxide or CVD nitride."
Col. 4, lines 63-67. The layer 15 is etched back to expose
the crest of each hill. "Thereafter, the exposed hill
portions of hemisphere particle layer 14 are etched back by
using remaining portions of layer 15 as a pattern mask."
Col. 5, lines 4-6.
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Last modified: November 3, 2007