Appeal No. 96-3998
Application No. 08/344,397
d) a single polysilicon layer having a predetermined
thickness and resistivity present on said insulative layer,
said single polysilicon layer including a polysilicon field
plate portion subtended by said first portion of said
insulative layer, serving as a field plate, and a gate portion
subtended by said second portion of said insulative layer,
serving as a gate, whereby said polysilicon field plate
portion provides for increased transconductance of said
transistor without reducing breakdown voltage to minimize the
spacing between said source region and said drain region;
e) a drain contact contacting said contact region; and
f) a source contact contacting said source region,
said source contact spaced from said drain contact, extending
laterally towards said drain contact no further than said
polysilicon field plate portion;
a plurality of heater elements, each of said heater
elements connected to one of said plurality of MOS
transistors; and
a plurality of orifices for expelling ink droplets, each
of said orifices operatively associated with one of said
plurality of heater elements.
The Examiner relies on the following references : 2
Yoshida et al. (Yoshida) 4,599,576 Jul. 08,
1986
Fujihara 5,089,871 Feb.
18, 1992
2The Examiner additionally relies on Appellants’
admissions of the prior art.
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