Appeal No. 96-3998
Application No. 08/344,397
is suggested by the teachings of the applied prior art.
Instead, the Examiner makes the broad general assertion at
page 5 of the Answer:
Ricoh teaches a high voltage MOSFET
with a drift region and dual thickness
gate insulator under a stepped gate, as
here claimed. It would clearly have been
obvious to use Ricoh’s high voltage MOSFET
structure in the admittedly known “thermal
ink jet printhead” ICs.
The Examiner, however, never provides any factual support for
the apparent contention that the MOSFET structure of Ricoh
corresponds to the claimed MOS transistor structure of claim
16.
Appellants, for their part, argue (Brief, page 9) that
there is no suggestion in any of the references to make the
proposed combination and even if such combination could be
made, such combination would lack the features as claimed. In
particular, Appellants point to the lack of teaching in any of
the references of the limitation recited in subparagraph f) of
independent claim 16 as follows:
a source contact contacting said source
region, said source contact spaced from
said drain contact, extending laterally
towards said drain contact no further
than said polysilicon field plate portion;
10
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