Appeal No. 97-1048
Application No. 08/120,998
(column 3, lines 57 through 60). The zener diode protects the
regulator and associated circuitry by limiting the voltage
across the regulator (column 5, lines 45 through 48; column 6,
lines 16 through 20).
Davies discloses a thermally protected power MOSFET
transistor 16 (Figures 1 and 2). The power MOSFET transistor
16 is formed on an integrated circuit substrate region of a
first conductive substrate chip 11 (column 1, lines 6 through
20; column 2, line 66 through column 3, line 2). A protection
circuit substrate region comprising a second conductive
substrate chip 21 is disassociated from the first conductive
substrate chip 11 by contact bumps 22 (column 3, lines 45
through 50). The contact bumps are used to transmit heat from
the chip 11 to the protection chip 21. If the heat on the
chip is too great because of a short or because of a large
amount of current flowing through the power transistor, the
circutry on protection chip 21 turns off power MOSFET 16
(column 7, line 66 through column 8, line 7).
Appellant argues (Brief, page 4) that:
[C]laim 1 is patentable over Schott et al in
view of Davies as there is no disclosure or
suggestion in the references of a high energy pulse
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