Appeal No. 1997-1319
Application 08/290,227
and 27, which constitute all the claims remaining in the
application.
The disclosed invention pertains to a method for
producing a large grain highly conductive thin film material.
The process begins by depositing upon a substrate a film of
amorphous material such as amorphous silicon. The amorphous
film is then annealed which creates nuclei and induces the
growth of large grain crystals. The resulting material is
said to have conductivity characteristics substantially
greater than the original amorphous material.
Representative claim 26 is reproduced as follows:
26. A process for producing a large grain highly
conductive thin film material without use of ion implantation,
the process comprising the following steps:
(a) depositing upon a substrate a film of amorphous
precursor material that is substantially free of crystal
growth-inducing nuclei and sites, said film having a thickness
T and a first electrical conductivity S1;
(b) following step (a), annealing said film to create
nuclei and induce growth of large grain crystals having
lateral dimensions substantially larger than said thickness T,
and to produce a second electrical conductivity S2 that is at
least about 10 greater than S1.4
The examiner relies on the following references:
Guckel et al. (Guckel) 4,897,360 Jan. 30, 1990
Chiang et al. (Chiang) 4,904,611 Feb. 27, 1990
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