Appeal No. 1997-1319
Application 08/290,227
implantation step whereas the claimed invention recites a
process without using ion implantation.
Our first observation is that Chiang uses ion
implantation as an improvement, and Chiang recognizes that the
process could be performed without ion implantation. Note
that Chiang compares the results of ion-implanted amorphous
silicon films to as-deposited (non-implanted) amorphous
silicon films [column 4, lines 40-51]. Thus, Chiang seems to
suggest the process without ion implantation as claimed, but
Chiang finds the implanted embodiment to be superior.
Our second observation is that the claimed recitation
“without use of ion implantation” appears to be contrary to
the invention as set forth in appellants’ disclosure. Figure
3 of appellants’ application depicts the formation of a thin
film material according to the invention. Figure 3 shows a
deposition reactor 44 in which an amorphous film is deposited
from a source material 46 which is doped by dopants 48 during
the deposition process. We fail to see how a process which
includes such a doping step can be said to be “without use of
ion implantation.”
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