Appeal No. 1996-3626
Application 08/302,155
the reactant gas temperature is maintained when the reactant
gas flow is constrained by means of a coaxial flow of two
different gases. Thus, we are left to conjecture on how
appellants achieve what they have claimed as their invention.
In the specification, we are directed to U.S. Patent
Number 4,798,165, for a teaching of how a gas carrying
deposition materials to a substrate is constrained to have an
axial symmetry. In said patent at column 3, lines 51 through
55 and column 4, lines 33 through 38, it is disclosed that
axially symmetrical gas flow toward a surface is referred to
as stagnation point flow. The axially symmetrical gas flow is
induced by means of a multiplicity of apertures over the
surface of a disk approximately the same size as the substrate
and through which the reactant gas flows (column 3, line 56
through column 4, line 9). It is known that the temperature
profile of the gas impinging on the substrate, as well as the
mole fraction of the gas components at a given distance from
the substrate surface, are generally radially uniform (column
4, lines 50 through 58).
Appellants disclose that they obtain their stated goal of
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