Appeal No. 1997-0858
Application No. 08/323,065
matter is adequately illustrated by independent claim 13 which
reads as follows:
13. A process for preparing a film formed of an oxide
superconductor having a clean, crystalline and
superconduc-tive surface grown on a substrate by
molecular beam epitaxy, the process comprising the steps
of:
placing said substrate in a vacuum chamber;
heating said substrate to a temperature in the
range of 650°C. to 750°C.;
locally supplying an oxidizing gas in the
proximity of the substrate to produce a pressure
in a first region of said vacuum chamber in
proximity to the substrate in the range of 6 x
6 5
10- to 8 x 10- Torr at a background pressure
9
of lower than 1 x 10- Torr; and
maintaining a pressure differential between said
first region of said vacuum chamber in proximity
to said substrate and a second region of said
vacuum chamber near an evaporation source,
wherein a pressure in said second region is
maintained at a pressure lower than the pressure
in the first region of said vacuum chamber,
wherein said film is deposited at a deposition
rate in the range of 0.5 to 2 nanometers/minute.
The references relied upon by the examiner as evidence of
obviousness are:
DeLozanne 5,004,721 Apr.
02, 1991
Harada et al. (Harada) 5,143,896 Sep. 01,
1992
Nonaka et al., (Nonaka), "Preparation of NdBa Cu O2 3 7-*
2
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