Appeal No. 1997-1301
Application No. 08/079,310
According to appellants, the invention is directed to a
process for fabricating a semiconductor device wherein the
radiation sensitive region comprises an acid generator which
is an "-substituted ortho-nitro benzyl ester where F* of the
"-substituent is at least 1.5 (Brief, page 2). Claim 1 is
illustrative of the subject matter on appeal and a copy of
this claim is reproduced below:
1. A process for fabricating a device
comprising the steps of forming a radiation
sensitive region on a substrate, exposing said
region to said radiation, developing in said
region a pattern defined by said exposure, and
transferring said pattern into the underlying
material, characterized in that said radiation
sensitive region comprises a material including
(1) a material that undergoes a reaction in
response to an acidic moiety and (2) an acid
generator comprising an "-substituted ortho
nitro benzyl ester wherein the F* for said "-
substituent is at least 1.5.
The examiner has relied upon the following references as
evidence of obviousness:
Houlihan et al. (Houlihan) 5,135,838 Aug. 4,
1992
Reichmanis et al. (Reichmanis), “Chemical Amplification
Mechanisms for Microlithography,” Chem. Mater., 3, pp. 394-
407, 1991.
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