Appeal No. 1997-1624
Application No. 08/384,816
examiner indicated that claim 24 is now allowable.
Accordingly, only claims 19 through 23 and 25 remain before us
on appeal.
Appellant's invention relates to vertical transistors
having a noncontinuous isolation layer and first and second
insulating portions extending from the top and bottom surfaces
of the semiconductor substrate, respectively, to the
noncontinuous layer for isolating adjacent transistors. Claim
19 is illustrative of the claimed invention, and it reads as
follows:
19. A vertical transistor, comprising:
a semiconductor substrate having top and bottom surfaces;
a noncontinuous isolation layer in the semiconductor
substrate between the top surface and the bottom surface;
a source region formed in the top surface of the
semiconductor substrate above the noncontinuous isolation
layer;
a gate electrode formed above the source region;
a first insulating material extending from the top
surface of the semiconductor substrate to the noncontinuous
isolation layer;
a drain region formed in the semiconductor substrate, a
portion of the noncontinuous isolation layer extending into
the drain region; and
2
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