Appeal No. 1997-1624
Application No. 08/384,816
considered the drain region. Further, since oxide isolation
film (62) extends into the portion of layer 61 between layer
63 and element 14, the isolation film extends into the drain
region, notwithstanding appellant's unsupported statement to
the contrary (Brief, page 5).
The examiner stated at the end of the rejection (Answer,
page 4) that the transistors of Cogan can be replaced by the
power MOSFET of Tamagawa because they are all vertical power
transistors, with no explanation as to the motivation for
making such a substitution. Appellant argues at length
(Brief, pages 5-6) that replacing Tamagawa's MOSFET with
Cogan's devices requires some motivation to do so. We agree.
However, viewing the examiner's response to appellant's
argument (Answer, paragraph bridging pages 5 and 6), we
believe that the examiner was not suggesting a substitution of
one transistor for the other. Rather the examiner was
attempting to demonstrate that the transistors have similar
structures and, therefore, that the teachings of Cogan (for
the isolation structure) can be combined with Tamagawa. As
Cogan suggests the need for isolation between vertical
transistors, Cogan provides motivation for modifying Tamagawa
6
Page: Previous 1 2 3 4 5 6 7 8 9 10 Next
Last modified: November 3, 2007